10th/3rd International Symposium on Development in Digital Measuring Instrumentation and Workshop on ADC Modelling and Testing - ISDDMI '98, Nápoles (Italia). 17-18 septiembre 1998
Resumen:
This work presents an automated low noise measurement system purposely designed for the characterization of MOS estructures of integrated circuits. The instrument will be used for monitoring the current tunneling in ultra thin oxide layeres during lifetime tests of suxh devices. The aim of this type of measurement is to study the sharp current fluctuations which normally precede the dielectric breakdown. The system allows to acquire the DC and AC components of the current in two separated channels for several hours at a maximum rate of 50 kSa/s. An automated procedure for the interruption of the test just a few seconds before breakdown occurs has been also implemented.
Palabras clave: oxide breakdown, ultra-low noise amplifier, virtual instrument.
Fecha de publicación: 1998-09-17.
Cita:
G. Basso, V. Ciuti, F. Crupi, R. Giannetti, B. Neri, PC based low noise measurement system for the characterization of ultra thin oxide mos devices, 10th/3rd International Symposium on Development in Digital Measuring Instrumentation and Workshop on ADC Modelling and Testing - ISDDMI '98, Nápoles (Italia). 17-18 septiembre 1998.
